J-F AST logo


Japanese-French lAboratory for Semiconductor physics and Technology


Date of creation: 2022

CNRS Institute: INP (Physics)

French co-director: Marceline BONVALOT

Japanese partner: University of Tsukuba

Japanese director: Shinji KURODA

Staff: 3 professors (University Grenoble Alpes), 3 researchers (CNRS), 1 research engineer (Air Liquide Japan), 7 professors (University of Tsukuba), 4 double degree PhD students, 2 double degree Master students

CNRS logo
University of Tsukuba logo
Grenoble Alpes University logo
Air Liquide Group logo
French GALTAST researchers

French J-F AST researchers


J-F AST was initiated in 2016 at the University of Tsukuba, as an International Education and Research Laboratory Program, in the framework of a Top Global University Project from the Japanese Ministry of Education.

The earliest objective was to promote international collaborative educational programs for student exchange and double degree diploma, based on the development of advanced research activities in the field of atomic scale technologies dedicated to innovative semiconducting materials.

Under the impulsion of researchers from CNRS, UGA and the University of Tsukuba, Air Liquide (Japan) was officially involved in 2017. From then on, collaborative research actions were fostered in a wide range of fields, in both pure and applied physics.

The core research program of this new IRL is dedicated to advanced physics and technology of electronic and opto-electronic semiconductor devices, with a particular focus on atomic scale processing and with a strong involvement from Air Liquide company.

Technological processing challenges rely on Atomic Layer Deposition and Etching developments with unique precursor gases, based on fundamental investigation of plasma-surface interactions. Investigation on semiconducting materials are motivated by the complementary expertise of each partner. Materials include wide band-gap semiconductors (GaN, diamond, Ga2O3) and new medium band-gap (BaSi2, kesterites) for energy applications, and narrow band-gap II-VI materials (CdTe/ZnTe) for quantum processes.

The long-term objective of this IRL is to establish a complete and unique cross-disciplinary international research laboratory involving physicists, chemists,
theoretical scientists and technological experts dedicated to the fabrication of advanced microelectronic, optical and power devices, addressing current technological issues and energetic, information and quantum technology challenges.



  • Semiconducting nanostructures for quantum devices
  • Wide band gap semiconductors devices (GaN, Ga2O3, diamond)
  • Nanomaterials surface functionalization
  • New semiconductors for photonics (BaSi2, kesterites)
  • Positron Annihilation Spectroscopy (PAS)
  • Magnetic thin films for spintronics
  • Atomic Layer Etching and Atomic Layer Deposition





  • CNRS/INP (Physics)
  • Université Grenoble-Alpes
  • CEA
  • Air Liquide
  • Laboratoire des Technologies de la Microélectronique (UMR5129)
  • Institut Néel (UPR2940)


  • Faculty of Pure and Applied Sciences, University of Tsukuba